Control of ZnSe Film Stoichiometry at ZnSe/GaAs Interface Grown by MOCVD

Abstract

ZnSe film stoichiometry at a ZnSe/GaAs interface was found to be critically dependent on the surface conditions of the GaAs substrate. It is shown for the first time that the main factor governing the interface stoichiometry is the competition between the Zn–As bondings and the Ga–Se bondings at the interface.