Journal of Applied Physics · 1999 · 41 citations · 10 references
EngineeringElectrical EngineeringPhysicsOptoelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportElectron TransportOptoelectronic DevicesPhotoelectron SpectroscopyQuantum OptoelectronicsSemiconductor PhysicsElectron AffinityElectron DiffusionElectron Transport In SemiconductorsOptoelectronic Device ModelingPhotocarrier DynamicsQuantum EfficiencyUltrafast Carrier Dynamics
Even though theoretical estimates predict response times for the photoemission process of electrons from a negative electron affinity GaAs photoemitter in excess of hundreds of picoseconds, recent measurements found electron bunch durations of 40 ps or less. This work presents precise measurements of picosecond electron bunches from a negative affinity bulk GaAs photocathode and develops a model which explains the measured bunch durations as well as the observed bunch shapes. The bunch shape turns out to be independent from the quantum efficiency of the photoemitter.
10
Observation of a charge limit for semiconductor photocathodes
M. Woods, J.E. Clendenin, J. Frisch et al. · Journal of Applied Physics · 1993 · 43 citations