Pt-H complexes in Si: Complementary studies by vibrational and capacitance spectroscopies

Abstract

The PtH and ${\mathrm{PtH}}_{2}$ complexes in Si have been studied by vibrational and transient-capacitance spectroscopies in the same, or similarly prepared, samples. Further, the levels of the PtH and ${\mathrm{PtH}}_{2}$ defects have been determined from their vibrational spectra and the vibrational lines have been associated with specific charge states of the defects. These results confirm that both vibrational spectroscopy and transient-capacitance methods probe the same defect complexes. These results also provide strong support for the previous assignments of deep level transient spectroscopy peaks to PtH and ${\mathrm{PtH}}_{2}$ complexes that were made on the basis of the depth dependence of defect-concentration profiles that were measured for etched Si samples. The intensities of the vibrational lines of the PtH and ${\mathrm{PtH}}_{2}$ complexes have also been calibrated so that the concentrations of these defects can be estimated from their vibrational spectra.