Enlarged Photodetection Using ${\rm SiO}_{x}$ Nanowire Arrays

Abstract

We have synthesized perpendicular SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> nanowire (NW) arrays on Si substrates and investigated them using scanning electron microscopy. Transmission electron microscopy and energy-dispersive spectroscopy have been used to investigate the single NW structure. A near-infrared emission at 700 nm is observed. In/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> NW and In/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> thin film (TF) contacts exhibit Schottky behavior. The SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> NW-based devices show six-fold improvements in photodetection efficiency in white-light illumination, compared to SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> TF-based devices under reverse bias condition.