Effect of N-containing additive gases on global warming gas emission during remote plasma cleaning process of silicon nitride PECVD chamber using C4F8/O2/Ar chemistry

Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures

B. E. E. Kastenmeier, P. J. Matsuo, JJ Beulens et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1996 · 145 citations

Natural Sciences, Materials Engineering, Materials Science +15

Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures

B. E. E. Kastenmeier, P. J. Matsuo, G. S. Oehrlein et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 93 citations

Natural Sciences, Materials Engineering, Materials Science +15

Remote microwave plasma source for cleaning chemical vapor deposition chambers: Technology for reducing global warming gas emissions

S. Raoux, Tom Tanaka, Mohan Krishan Bhan et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 88 citations

Engineering, Chemical Engineering, Manufacturing Engineering +14

Role of N2 addition on CF4/O2 remote plasma chemical dry etching of polycrystalline silicon

P. J. Matsuo, B. E. E. Kastenmeier, JJ Beulens et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 69 citations

Natural Sciences, Materials Engineering, Materials Science +17

Role of nitrogen in the downstream etching of silicon nitride

Matthew G. Blain, T.L. Meisenheimer, J. Stevens · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1996 · 50 citations

Engineering, Chemical Engineering, Chemistry +15