Publication | Closed Access
The influence of nitrogen ion energy on the quality of GaN films grown with molecular beam epitaxy
34
Citations
13
References
1995
Year
Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsGan Power DeviceMolecular Beam EpitaxyCategoryiii-v SemiconductorNitrogen Ion EnergyGan Films
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