Tunnel magnetoresistance in GaCrN∕AlN∕GaCrN ferromagnetic semiconductor tunnel junctions

Abstract

Ga Cr N ∕ Al N ∕ Ga Cr N trilayer structures with different Cr concentrations were grown by molecular-beam epitaxy. Well-defined hysteresis loop was observed in the magnetization versus magnetic field curves even at room temperature. By the current versus voltage characteristics it is confirmed that the AlN layer behaves as a tunnel barrier with an estimated barrier height of 2.1eV in the GaCrN∕AlN∕GaCrN structures. For these trilayer tunnel junction diodes, clear hysteresis characteristics were observed in the resistance versus magnetic field curves at 77K when the current flow and the applied magnetic field were perpendicular to and parallel to the junction plane, respectively.