Publication | Open Access
Optical and Structural Properties of Bismuth Doped ZnO Thin Films by Sol-Gel Method: Urbach Rule as a Function of Crystal Defects
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Citations
14
References
2014
Year
Optical MaterialsEngineeringCrystal DefectsSolid-state ChemistryZinc OxideChemistryIi-vi SemiconductorUrbach RuleZno LmsOptical PropertiesSol-gel MethodMaterials ScienceOxide ElectronicsGallium OxideSemiconductor MaterialApplied PhysicsUndoped ZnoThin FilmsFunctional Materials
Bismuth (Bi) doped zinc oxide (ZnO:Bi) thin lms were prepared on glass substrates by solgel spin coating technique using homogeneous precursor solutions, and eects of Bi doping on the structural and optical properties of ZnO were investigated.The crystalline of ZnO lms shifted from polycrystalline nature to amorphous nature with Bi doping.The plane stresses (σ) for hexagonal ZnO and ZnO:Bi crystals were calculated according to the biaxial strain model.The Urbach rule was studied as a function of non-thermal component to the disorder (defects in crystal structures) which is especially observed in the case of non-crystal semiconductors.The calculated Urbach energies and steepness parameters of undoped ZnO and ZnO:Bi lms varied between 44.33 meV and 442.67 meV, and 58.3 × 10 -2 and 5.8 × 10 -2 , respectively.The Urbach energies of the lms increased with an increase in the Bi doping concentration and a great dierence was observed for 7.0 mol.% doping.The band gap values of the lms exhibited a uctuated behavior as a result of doping eect.
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