Solid source molecular beam epitaxy of GaInAsP/InP: Growth mechanisms and machine operation

Abstract

This article reports on the growth of GaInAsP/InP by solid source molecular beam epitaxy the incorporation efficiencies of the group V dimer and tetramer molecular species, and the functioning of the MBE system. The incorporation efficiency of As4 is found to be close to that of As2 while the incorporation efficiency of P4 is only half that of P2. Room temperature and low temperature photoluminescence measurements demonstrate that material grown using As4 is of better quality than that grown using As2. After the use of P4, a tenfold increase in the pressure burst occurs upon warming of the liquid nitrogen shrouds, and is believed to be caused by the formation of deposits containing white phosphorus. The atomic As to P incorporation ratio is approximately 10, when using P2, and exhibits a substrate temperature dependence.