Electrical properties of p-type HgCdTe/ZnS interfaces

Abstract

A study is made of <i>p</i>-type HgCdTe surface passivation with ZnS. Measurements of capacitance-voltage characteristics for metal insulator semiconductor (MIS) devices show that the interface electrical properties strongly depend on the surface preparation. Under some appropriate surface pretreatment, the fixed interface charge density can be lowered to near -1 x 10¹¹ cm^-2, and the slow trap density can be less than 1 x 10¹¹ cm^-2, but the interface trap density is still as high as 10¹² cm^-2 eV^-1. Experimental results are discussed.