Henry Yuan - Concepedia

Author

Henry Yuan

Georgia State University

Also Known As

H. X. Yuan, H.X Yuan, H.X. Yuan, Henry X. Yuan, Henry Yuan

Publications

316

Citations

H-Index

Concepts

All Affiliations

Georgia State University Teledyne Technologies (United States)Institute for Microstructural Sciences Cornell University

About

Henry Yuan is an author at Georgia State University specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	220
2	Applied Physics	7	7	220
3	Electrical Engineering	6	6	209
4	Natural Sciences	2	2	91
5	Computer Engineering	1	1	34

Henry Yuan

Publications

290

Citations

H-Index

Page 1

	Year	Citations
Homojunction internal photoemission far-infrared detectors: Photoresponse performance analysis A. G. U. Perera, Henry Yuan, M. H. Francombe Journal of Applied Physics Optical MaterialsEngineeringSemiconductor MaterialsOptoelectronic DevicesIntegrated Circuits	1995	81
Mid-infrared two-photon absorption in an extended-wavelength InGaAs photodetector Marco Piccardo, Noah A. Rubin, Lauren Meadowcroft, Applied Physics Letters	2018	47
GaAs multilayer p+-i homojunction far-infrared detectors A. G. U. Perera, Henry Yuan, Sampath Gamage, Journal of Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsCutoff Wavelength	1997	42
FPA development: from InGaAs, InSb, to HgCdTe Henry Yuan, Gary Apgar, Jong-Woo Kim, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE EngineeringInspectionFpa DevelopmentOptical TestingOptoelectronic Devices	2008	34
Dark current analysis of Si homojunction interfacial work function internal photoemission far-infrared detectors Henry Yuan, A. G. U. Perera Applied Physics Letters Electrical EngineeringPhotoelectric SensorEngineeringPhysicsInfrared Sensor	1995	26
Space-charge-limited conduction in Si <i>n</i>+–<i>i</i>–<i>n</i>+ homojunction far-infrared detectors Henry Yuan, A. G. U. Perera Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesSpace-charge-limited Conduction	1996	16
Recent progress in extended wavelength InGaAs photodetectors and comparison with SWIR HgCdTe photodetectors Henry Yuan, Jiawen Zhang, Jong-Woo Kim,	2019	13
GaInSb photodetectors developed from single crystal bulk grown materials Henry Yuan, D. Grubišic, T. T. Wong Journal of Electronic Materials Materials SciencePhotonicsEngineeringGainsb PhotodetectorsPhotodetectors	1999	11
A spectroscopic study of GaAs homojunction internal photoemission far infrared detectors Wenzhong Shen, A. G. U. Perera, Sampath Gamage, Infrared Physics & Technology Optical MaterialsEngineeringFir DetectorsOptoelectronic DevicesInfrared Detectors	1997	10
Electrical properties of p-type HgCdTe/ZnS interfaces Henry Yuan Optical Engineering	1993	10

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