Journal of Applied Physics · 1959 · 25 citations · 6 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectromagneticsElectromagnetismCarrier TransportElectrical ConductivityElectromagnetic WavesFaradaic ProcessesFaraday EffectGermanium Device Materials
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation A. K. Walton, T. S. Moss; Free‐Carrier Faraday Effect in n‐Type Germanium. Journal of Applied Physics 1 June 1959; 30 (6): 951–952. https://doi.org/10.1063/1.1735275 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioJournal of Applied Physics Search Advanced Search |Citation Search
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Drift Mobilities in Semiconductors. I. Germanium
M. B. Prince · Physical Review · 1953 · 317 citations
Properties of Silicon and Germanium
E. M. Conwell · Proceedings of the IRE · 1952 · 185 citations
The Hall Coefficient of Semiconductors
H. F. Jones · Physical Review · 1951 · 49 citations