Publication | Closed Access
The effect of interface roughness scattering on low field mobility of 2D electron gas in GaN/AlGaN heterostructure
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Citations
19
References
2004
Year
Wide-bandgap SemiconductorElectrical EngineeringLow Field MobilityEngineeringPhysicsApplied PhysicsCondensed Matter PhysicsAluminum Gallium NitrideElectron GasGan Power DeviceMultilayer HeterostructuresCategoryiii-v SemiconductorInterface Roughness
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