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Characterization of photoconductive CdS thin films prepared on glass substrates for photoconductive-sensor applications
46
Citations
10
References
2008
Year
Thin Film PhysicsOptical MaterialsEngineeringOrganic Solar CellGlass SubstratesThin Film Process TechnologyCadmium SulfideSemiconductorsIi-vi SemiconductorPhotoelectric SensorElectronic DevicesPhotodetectorsThin Film ProcessingMaterials ScienceOptoelectronic MaterialsSemiconductor MaterialRoom TemperaturePhotoconductive-sensor ApplicationsRadio-frequency MagnetronApplied PhysicsThin Film DevicesThin FilmsOptoelectronicsSolar Cell Materials
Cadmium sulfide (CdS) thin films with n-type semiconductor characteristics were prepared at room temperature on glass substrates by radio-frequency magnetron sputtering for photoconductive-sensor applications. Films deposited at room temperature exhibit polycrystalline phases and show smooth surface morphologies. The deposition rate of the films decreases with increasing working pressure. The dark- and photoresistances in 400-nm-thick CdS films deposited at 6.7×10−1Pa and 80W were approximately 1×105 and 3×104Ω∕sq, respectively. Lowering both the dark- and photoresistances lowers the sensitivity (Rdark∕Rphoto) of the resistance.
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