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Preparation and Properties of Magnetic Garnet Films Containing Divalent and Tetravalent Ions
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1976
Year
Magnetic PropertiesOptical MaterialsThin Film PhysicsEngineeringCrystal Growth TechnologyMagnetic ResonanceThin Film Process TechnologyChemistryMagnetic MaterialsMagnetismFilm Magnetic PropertiesMagnetic Thin FilmsEpitaxial GrowthMaterials ScienceMaterials EngineeringGarnet FilmsPhysicsMagnetic MaterialTetravalent IonsFerromagnetismNatural SciencesApplied PhysicsLiquid Phase EpitaxyThin FilmsMagnetic Property
The relevant phase equilibrium data necessary to grow garnet films containing divalent and tetravalent ions by liquid phase epitaxy are presented. The effects of melt composition on film magnetic properties and film composition are presented as is the influence of growth kinetics on the film magnetic parameters. Work on the system is stressed. A coupled distribution coefficient is defined which adequately describes the Ca2+‐Ge4+substitution. The effect of melt depletion on magnetic properties is discussed and data presented to indicate the magnitude of the effect observed in the system. An example of the propagation characteristics observed in the system is also shown. A technique for controlling the temperature dependence of the collapse field in LPE films is presented. The use of Lu3+ as both a dodecahedral and octahedral substituent is shown to lead to a system flexible enough to meet most of the present device requirements.