Mass Spectrometric Studies of the Nitridation of Silicon

Abstract

The nitridation of silicon was examined by analyzing the nitriding atmosphere with a mass spectrometer. Silicon monoxide vapor was found throughout the entire temperature range of the process in amounts of the order of 10 −3 of the volume of the nitriding agent. Controversial results obtained in previous investigations of nitridation kinetics are explained in terms of the SiO vapor and the O 2 partial pressure of the system. The effects of H 2 and H 2 O on nitridation are also discussed.