Disorder of an AlAs-GaAs superlattice by silicon implantation

Abstract

Data are presented on a 126-layer AlAs-GaAs superlattice which has been selectively disordered by silicon implantation. Silicon ions, implanted at 375 keV and a dose of 1014 cm−2, yield a compositionally disordered region 0.33 μm thick centered 0.7 μm below the superlattice surface. The implanted region demonstrates reduced photoluminescence intensity relative to the unimplanted regions of the superlattice. The amphoteric nature of silicon and defect-induced vacancies account for the range and extent of disordering observed in the superlattice.