Dependence on volume of the phonon frequencies and the ir effective charges of several III-V semiconductors

Abstract

The mode Gr\"uneisen parameters of the LO and TO Raman phonons of AlN, BN, and BP, and the dependence of ${e}_{T}^{*}$ on lattice constant have been measured by Raman scattering in a diamond anvil cell. The results for ${e}_{T}^{*}$ are interpreted by means of pseudopotential calculations of ${e}_{T}^{*}$ versus lattice constant.