Analysis and modeling of subthreshold leakage of RT-components under PTV and state variation

Abstract

In this work we present a SPICE-based RTL subthreshold-leakage model analyzing components built in 70nm technology [1]. We present a separation approach regarding inter- and intra-die threshold variations, temperature, supply-voltage, and state dependence. The body-effect and differences between NMOS and PMOS introduce a leakage state dependence of one order of magnitude[2, 3]. We show that the leakage of RT-components still shows state dependencies between 20% and $80%. A leakage model not regarding the state can never be more accurate than this. The proposed state aware model has an average error of 6.7% for the RT-components analyzed.