28V High-Linearity and Rugged InGaP/GaAs Power HBT

Abstract

This paper reports on the improvement of a previously developed InGaP/GaAs HBT for 24-28V linear power operation. The improvements achieved were: application of dynamic bias circuit which improves the ACLR under WCDMA modulation; modification of device technology improving ruggedness to sustain 10:1 VSWR at 30V collector bias under P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1dB </sub> driving conditions and over 6 dB of gain compression; maintenance of lifetime and reliability simultaneously. Building blocks of HBT were strung together for higher power and good scaling of performance was achieved supporting the validity of the layout approach and the thermal design. Devices delivering P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1dB</sub> equiv 8W under CW conditions provided ACLR equiv -50 dBc at 8.5 dB back-off and 16% efficiency for WCDMA signal (PARequiv8.7 dB) at 2.14 GHz. Lifetime test over 3000 hours was repeated for 28V bias and 0.05mA/mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2 </sup> current density at 315 degree C junction temperature. Therefore, the InGaP/GaAs HBT technology is mature now for the high linearity power amplification