Characterization of doped silicon in low carrier density region by terahertz frequency Faraday effect

Abstract

We report on optical characterization of doped semiconductors by using terahertz Faraday rotation measurements in Cross-Nicole configuration. The detection sensitivity of Faraday rotation angle as small as 0.5mrad is obtained. The scheme is applied to an n-type silicon wafer of 525μm thickness in carrier freeze-out temperature region. The carrier density below N=1×1014cm−3 is evaluated under magnetic field B=1T.