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Gliding dissociated dislocations in hexagonal CdS
46
Citations
16
References
1980
Year
Materials ScienceIi-vi SemiconductorEngineeringDislocation InteractionCrystalline DefectsPhysicsElectron MicroscopyApplied PhysicsCondensed Matter PhysicsSolid MechanicsDefect FormationHexagonal CdsStacking Fault EnergyDefect ToleranceAbstract Basal DislocationsMicrostructure
Abstract Basal dislocations in CdS have been studied using the weak-beam method of electron microscopy. Networks of dissociated nodes and long lengths of dissociated dislocations were observed, from which the stacking fault energy was determined to be γ = 85 ± 21 mJ m−2. Dissociated dislocations were observed gliding while dissociated, both partials being visible during the motion. This motion was recorded on video tape, and shows conclusively that the dislocations glide while dissociated.
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