Auger and electron energy-loss study of the Al/SiC interface

Abstract

Auger and electron energy-loss spectroscopies, as functions of Al coverage and annealing temperature, have been used to determine the mechanism of formation of the Al/SiC interface. Al deposited at room temperature forms quasi-metallic islands randomly distributed over the surface. Annealing at moderate temperature (≤600 °C) causes aggregation of Al at C-rich sites. At higher temperature, Al reacts with C (but not with Si) to form Al4C3.