Applied Physics Letters · 2003 · 90 citations · 22 references
EngineeringMaterials EngineeringMaterials ScienceCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsDefects In Electronic MaterialsOptical Properties Of SemiconductorsSemiconductor DefectsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsDefect ComplexesNonradiative RecombinationNonradiative Recombination CentersPhotoluminescencePositron Annihilation SpectroscopyRecombination CentersVacanciesVacancy Complexes
Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found to contain Ga vacancies in defect complexes. The density of the vacancy complexes increases rapidly to the order of 1018 cm−3 with increasing N composition and decreases after annealing at 700 °C. The anticorrelation of the vacancy concentration and the integrated photoluminescence intensity suggests that the Ga vacancy complexes act as nonradiative recombination centers.
22
1-eV solar cells with GaInNAs active layer
Daniel J. Friedman, John F. Geisz, Sarah Kurtz et al. · Journal of Crystal Growth · 1998 · 418 citations