Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1999 · 16 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsPhotonicsLaser DiodesLaser PhysicsOptical WaveguidesSemiconductor HeterostructuresSemiconductor LasersHeterostructure DevicesHeterostructure LasersHigh-power Laser DiodesHigh-power Semiconductor LasersMaximum Power OutputSelf-aligned StructuresSemiconductor Laser DiodesSingle-mode Operation
High power InGaAs/AlGaAs laser diodes with decoupled confinement heterostructure (DCH) have been developed. Almost Al-free waveguide and cladding layers were realized in 980 nm DCH laser diodes without degrading temperature characteristics. The extremely low electrical and thermal resistances allowed high power and efficient operation. The maximum CW output power as high as 9.5 W was obtained with 100-micrometer-aperture broad area. DCH laser diode. The maximum efficiency was 55% at 2.5 W. The series resistance of 1.8-mm long cavity was 0.04(Omega) and internal loss was 1.5 cm<SUP>-1</SUP>. The characteristic temperature (T<SUB>0</SUB>) was 155 K. The substantially Al-free DCH structure enables easy fabrication of various index guided laser diodes. We have developed two types of real index guided laser diodes, buried- ridge and self-aligned structure. Buried-ridge laser diode presented 1.3 W maximum CW output power and 500 mW single mode operation. Self-aligned structure laser diodes showed 1.4 W CW output power and 700 mW single mode operation with better reproducibility.