Junction Delineation on Silicon in Electrochemical Displacement Plating Solutions

Abstract

Antimony, copper, silver, platinum, and gold can be deposited on silicon by electrochemical displacement. The displacement plating process induces potential differences between abraded and polished n‐ and p‐type silicon. This results in metal being deposited at different rates on the four types of silicon surfaces which in turn produces p‐n junction delineation. The process also shows up abrupt changes in the impurity concentration at the surface. The maximum resolution between junctions in a multiple junction crystal is about 2 microns.