Modeling for floating body effects in fully depleted SOI MOSFETs

Abstract

A model based on SOI MOSFET and BJT device theories is developed to describe the current kink and breakdown phenomena in thin-film SOI MOSFET drain-source current-voltage characteristics operated in strong inversion. The modulation of MOSFET current by raised floating body potential is discussed to provide an insight for understanding the suppression of current kink in fully depleted thin-film SOI devices. The proposed analytical model successfully simulates the drain current-voltage characteristics of thin-film SOI n-MOSFETs fabricated on SIMOX wafers.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>