Applied Physics Letters · 2001 · 93 citations · 16 references
Ii-vi SemiconductorPhotoluminescenceEngineeringPhysicsMany-body Quantum PhysicGasb/gaas QdsQuantum DeviceApplied PhysicsQuantum DotsQuantum SolidExcitation DensityMany-particle EffectsOptoelectronicsCompound SemiconductorSemiconductor Nanostructures
Many-particle effects are investigated in the photoluminescence of type II GaSb/GaAs quantum dots (QDs). With increasing excitation density, i.e., exciton occupation, the photoluminescence shows first a blueshift and then saturates developing a plateau region. The peculiar behavior is attributed to Coulomb charging and state filling of the localized holes to dominate the many-particle regime. A high temperature stability makes the GaSb/GaAs QDs suitable for room-temperature devices.
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Carrier dynamics in type-II GaSb/GaAs quantum dots
Fariba Hatami, Marius Grundmann, N. N. Ledentsov et al. · Physical review. B, Condensed matter · 1998 · 244 citations
Radiative states in type-II GaSb/GaAs quantum wells
N. N. Ledentsov, J. Böhrer, Max Beer et al. · Physical review. B, Condensed matter · 1995 · 217 citations