A Printed and Flexible Field‐Effect Transistor Device with Nanoscale Zinc Oxide as Active Semiconductor Material

Abstract

A family of single-source precursors for low temperature processing of uniform, transparent, and adherent ZnO thin films on various substrates is studied. They decompose cleanly under very mild processing conditions of 150 °C. The resulting ZnO thin films exhibit promising semiconducting properties when printed in a field-effect transistor (FET) device structure. This class of precursor compounds is compatible with existing printing technologies and allows printing of semiconductors on flexible polymer substrates under mild conditions.