Effect of substrate materials in the growth of ZnSe on GaAs and GaP substrates

Abstract

ZnSe layers were grown on GaP and GaAs substrates by hydrogen-transport vapor-phase epitaxy. The influences of the substrate materials upon the growth rate and the lattice parameter of the ZnSe layers were studied. The ZnSe lattice parameter normal to the heterointerface was measured by using x-ray diffraction. In the case of the growth on the (100) plane, a larger growth rate and better crystallinity on GaAs were obtained compared with growth on GaP. This strongly suggests that misfit strain together with dislocation formation is quite harmful to the growth of high-quality heteroepitaxial layers. The layers were considered to be strained compressively in the normal direction to the heterointerface by thermal stress.