physica status solidi (a) · 1987 · 43 citations · 8 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSolid State PhysicsDeformation MechanismsDislocation MechanicsDislocation TheoryDislocations In SemiconductorsMicrostructure AnalysisSemiconductor DefectsDislocation BehaviorDislocation LoopsDislocation MobilityDislocation PropagationDislocationsPartial DislocationsTransmission Electron Microscopy Of DislocationsTwinning
The rosette dislocations generated, at room temperature, by micro-indentation of the (001) surface of semi-insulating or n-doped GaAs are studied by TEM. The [110] rosette arms contain perfect α-dislocations: they are prismatic dislocation half-loops moving on the glide prisms formed by the (111) and (111) planes. The [110] rosette arms correspond to the propagation of partial β-dislocations, leading to the formation of mechanical microtwins on the (111) and (111) planes. All the twinning dislocations are of the 30° (β) type and this is consistent with the lower mobility of this type of partial dislocation.
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