SiGe-on-insulator substrate using SiGe alloy grown Si(001)

Abstract

Low-energy oxygen ion (25 keV O+) implantation was performed on a pseudomorphic Si1−xGex/Si(001) of uniform composition in an attempt to create a SiGe-on-insulator (SiGe-OI) substrate using the separation-by-implanted-oxygen technique. Choosing a small Ge composition (<0.3) was found to be essential to achieving a SiGe-OI geometry of structural integrity.