Conduction regime in innovative carbon nanotube via interconnect architectures

Abstract

We report on the electrical properties of multiwall carbon nanotube based via interconnects over a broad range of temperature and bias voltage. By using innovating processing techniques, high density nanotube vias have been fabricated from single damascene and double damascene via architectures with diameters down to 140nm. For single damascene structures, resistances as low as 20Ω have been achieved for 300nm via size. Further measurements show that the conductance increases with temperature following an exponential law, which can be interpreted in terms of a disordered quasi-one dimensional conduction regime.