Real-time detection of higher hydrides on the growing surface of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy

Abstract

Real-time in situ observations of the growth of a-Si:H films have been carried out in a rf glow discharge plasma reactor by use of infrared reflection absorption spectroscopy. Deuterium substitution of an interface layer is employed so as to differentiate the higher hydride species on the growing surface from those located at the film interface on the substrate. A three-layer model is presented to give a quantitative discussion on the absorption signal intensity in the reflection spectroscopy with respect to the normal incident transmission spectroscopy.