Applied Physics Letters · 1974 · 22 citations · 3 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportCurrent-voltage CharacteristicsElectrical CharacterizationSemiconductor Device MaterialsSemiconductor PhysicsWide-bandgap Semiconductor DevicesCarrier Transport In SemiconductorsCarrier Transport MechanismsCharge Transport MeasurementsElectrical Transport PropertiesElectron Transport In SolidsSaturationTransport In SemiconductorsVelocity Saturation
Current-versus-voltage characteristics of bulk n-type AlxGa1−xAs devices are examined for material compositions 0.27<x<0.43. Preliminary experimental evidence indicates that the electron velocity saturates at a composition xs=0.38±0.02 above a threshold electric field of 2.4 kV/cm. The carrier saturation velocity is estimated to be 3.3×106 cm/sec. The direct-indirect transition of AlxGa1−xAs at 300°K, inferred from transport measurements, is estimated to be in the range 0.45–0.48.
3
Transferred Electron Amplifiers and Oscillators
C. Hilsum · Proceedings of the IRE · 1962 · 259 citations
MICROWAVE OSCILLATIONS IN GaAs<i>x</i>P1-<i>x</i> ALLOYS
Julian Allen, M. Shyam, Y. S. Chen et al. · Applied Physics Letters · 1965 · 62 citations