Evidence for induced far-infrared emission from <i>p</i>-Ge in crossed electric and magnetic fields

Abstract

Experimental evidence is presented for stimulated far-infrared emission from population-inverted hot-carrier system in p Ge. The spectroscopic study by use of an n-InSb cyclotron-resonance detector reveals that the spectrum of the emission consists of a fairly sharp band located at the photon energy ∼5 or ∼10 meV depending on the applied fields.