Surface damage on abraded silicon specimens

Abstract

Abstract Single crystal Si specimens have been unidirectionally abraded, the abrasives ranging from 0•25 micron diamond to No. 240 SiC paper, and examined by transmission electron microscopy and standard metallographic methods. The investigation showed that the damage varied in a progressive manner with the severity of the abrasion treatment, ranging from rows of single dislocations to bands of both dislocation networks and cracked material. The corresponding depths of damage ranged from approximately 0•2 to 24 microns. Anisotropy of damage occurred for the fine abrasions (often termed polishing), but was not observed for the coarse abrasions. When abraded specimens were annealed, the dislocations changed their configuration, and new dislocations propagated in order to relieve elastic strains. A qualitative description of the abrasion process for Si based on the results of the investigation is given.