Analysis of Point Defect States in Copper I. The Influence of the Point Defect State on the Irradiation Damage Rate at 80 °K

Abstract

Abstract The present measurements of the irradiation damage rate at 80 °K and those from the literature demonstrate the validity of the unsaturable trap model of Walker for copper over a wide range of trap concentrations and radiation induced defects. These results imply the free migration of interstitials below 80 °K. By damage rate measurements at 80 °K effective concentrations of vacancies and interstitial traps introduced by any pretreatment can be determined.