Diffraction contrast analysis of two-dimensional defects present in silicon after annealing

Abstract

Abstract A transmission electron microscope investigation has been made of the two-dimensional defects present in mechanically damaged silicon specimens after annealing at 1050°c in air. Diffraction contrast effects from both the planar fault and the bounding dislocation were interpreted in terms of the dynamical theory of diffraction contrast (Howie and Whelan 1961, 1962), and showed that the defects were extrinsic stacking faults bounded by 1/3 [111] Frank partial dislocations. This result supports the view that the defects arise by a Silcock and Tunstall (1964) type of mechanism.