Patterning of organic thin film transistors by oxygen plasma etch

Abstract

All applications of organic thin film transistors require patterning of the organic thin film to achieve a low off current and to prevent cross talk between neighboring transistors. A common method for patterning consists of using a protective layer and etching the uncovered small molecule film by oxygen plasma. One of the handicaps of this process is the observed degradation of the transistor characteristics. By varying the resist overlap, the authors show that the main cause of this performance degradation is, in fact, a far-reaching underetch of the oxygen plasma which can be overcome by choosing the right geometry of the resist pattern.