The effect of As/Ga flux ratio on Si-doped GaAs layers grown by molecular beam epitaxy - Concepedia

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The effect of As/Ga flux ratio on Si-doped GaAs layers grown by molecular beam epitaxy

10

Citations

14

References

1994

Year

D.H. Zhang, K. Radhakrishnan, S. F. Yoon

Journal of Crystal Growth

Electrical EngineeringEngineeringPhysicsSi-doped Gaas LayersApplied PhysicsSemiconductor MaterialMolecular Beam EpitaxyEpitaxial GrowthCompound Semiconductor

References

	Year	Citations

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