Incorporation of Oxygen into Silicon during Pulsed-Laser Irradiation

Abstract

Evidence for the oxygen incorporation into silicon during surface melting by the pulsed-laser irradiation is presented. SIMS measurement of 18 O in Si samples which were laser-irradiated in 18 O 2 atmosphere shows that 18 O is introduced in Si with the maximum concentration 7×10 20 cm -3 and the penetration depth 1.4 µm. The incorporation of 18 O is blocked when the Si surface is covered with SiO 2 .