Field electron emission from individual diamond cone formed by plasma etching

Abstract

Field electron emission properties of individual diamond cone were investigated using a customized double-probe scanning electron microscope system. The diamond cone was formed by maskless ion sputtering process in bias-assisted hot filament chemical vapor deposition system. The as-formed sharp diamond cone coated with high-sp2-content amorphous carbon exhibited high emission current of about 80μA at an applied voltage of 100V. The field emission was stable and well in consistent with the conventional Fowler-Nordheim emission mechanism, due to a stabilization process in surface work function. It has demonstrated the possibility of using individual diamond cone as a point electron emission source, because of its high field electron emission ability and stable surface state after the process of work function stabilization.