Investigations into the growth of AIN by MOCVD using trimethylsilylazide as nitrogen source

Abstract

Thin films of AIN have been deposited by atmospheric-pressure MOCVD using trimethylaluminium (Me3Al) and trimethylsilylazide (Me3SiN3) as precursors. The films were deposited at 300 or 450 °C and had growth rates of up to 3 µm h–1