Applied Physics Letters · 1986 · 74 citations · 18 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsInterface ScienceSpectroscopyChemical BondingInterface ModelingInterface PhysicsInterfacial PhenomenaSemiconductor InterfacesSurface PhysicsAtomic BondingBonding StructureEpitaxial InterfacesInterface BondingInterface CharacterizationInterfacial Electronic StructureSilicon InterfacesSurface Core-level Shifts
High resolution core level spectroscopy with synchrotron radiation is used to determine the bonding at the epitaxial CaF2/Si (111) interface. It is found that both Ca and F bond to Si at the interface inducing core level shifts of +0.4 eV and −0.8 eV, respectively. Structural models with an atomically sharp interface are proposed where Ca bonds to the first layer Si and F to the second layer.
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