Excitonic lasing in semiconductor quantum wires

Abstract

Direct experimental evidence for excitonic lasing is obtained in optically pumped V-groove quantum wire structures. We demonstrate that laser emission at a temperature of 10 K arises from a population inversion of localized excitons within the inhomogeneously broadened luminescence line. At the lasing threshold, we estimate a maximum exciton density of about $1.8\ifmmode\times\else\texttimes\fi{}{10}^{5} {\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}.$