Photoreflectance evidence of multiple band gaps in dilute GaInNAs layers lattice-matched to GaAs

Abstract

Dilute Ga1−xInxNyAs1−y∕GaAs quantum wells with high In-content, which are under compressive strain, have been shown previously to exhibit multiple band gaps, likely due to the presence of different nitrogen nearest-neighbor environments, i.e., N-Ga4−mInm(0⩽m⩽4) short-range-order clusters. Here, photoreflectance (PR) measurements on lattice-matched dilute GaInNAs-on-GaAs layers with low indium and nitrogen content are reported, which give evidence that these layers also exhibit several distinct band gaps. These distinct band gaps, which were found to coexist, are associated with different nitrogen bonding configurations, as revealed by Raman spectroscopy. Thus, the metastable nature of GaInNAs seems to be a persistent intrinsic property, irrespective of strain and indium content. The annealing-induced blueshift of GaInNAs band gap energy, which is usually observed in this system, has been associated with the change in the intensity of PR resonances related to different N-Ga4−mInm configurations.