Journal of Applied Physics · 2009 · 57 citations · 27 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsLuminescent MaterialsOptoelectronic MaterialsWide Band Gap SemiconductorsCarrier RecombinationEmission Spectra AnalysisExcitationLow-temperature MaterialsLuminescence MechanismsLuminous TransmittancePhotoluminescencePhotoluminescence Spectroscopy
The carrier localization phenomenon has been investigated for GaBiAs by photomodulated transmittance (PT) and photoluminescence (PL). In the case of PT measurements, a decrease in the energy-gap related PT signal has been clearly observed below 180 K. In PL spectra a broad emission band very sensitive to the excitation power has been found. In comparison to the energy-gap related transition, this band is shifted to red. The recombination time for this band at low temperature decreases from 0.7 to 0.35 ns with the increase in the emission energy. All the findings are clear evidences for strong carrier localization in this alloy.
27
Temperature dependence of the energy gap in semiconductors
Y. P. Varshni · Physica · 1967 · 5.3K citations
Molecular beam epitaxy growth of GaAs1−xBix
S. Tixier, M. Adamcyk, T. Tiedje et al. · Applied Physics Letters · 2003 · 453 citations
Natural Sciences, Materials Engineering, Materials Science +17
Band gap of GaAs1−xBix, 0<x<3.6%
S. Francoeur, M. J. Seong, A. Mascarenhas et al. · Applied Physics Letters · 2003 · 427 citations
Valence band anticrossing in GaBixAs1−x
Kirstin Alberi, O. D. Dubón, W. Walukiewicz et al. · Applied Physics Letters · 2007 · 316 citations