Laser Photoacoustic Diagnostics of Advanced Materials With Different Structure and Dimensions

Abstract

In the article the results of practical implementation of the PA methods in the study of materials of different structure and dimensions are presented. The features of PA conversion in inhomogeneous semiconductor structures such as porous silicon and doped semiconductor materials are analyzed. To investigate the thermal and elastic properties of porous silicon's based composites gas-microphone and piezoelectric methods registration of PA signal were used.