Perpendicularly magnetized <i>τ</i>-MnAl (001) thin films epitaxied on GaAs

Abstract

Perpendicularly magnetized τ-MnAl films have been epitaxied on GaAs (001) by molecular-beam epitaxy. Crystalline quality and magnetic properties of the samples were strongly dependent on growth temperature. The highest coercivity of 10.7 kOe, saturation magnetization of 361.4 emu/cm3, perpendicular magnetic anisotropy constant of 13.65 Merg/cm3, and magnetic energy product of 4.44 MGOe were achieved. These tunable magnetic properties make MnAl films valuable as excellent and cost-effective alternative for not only high density perpendicular magnetic recording storage and spintronics devices but also permanent magnets.